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model:PT-T1200-PECVD

Customized PECVD System

Application

Detailed Parameters Of The Product

Introduction:
PT-T1200-PECVD PECVD is a is PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system which consists of with Pre-Heater and 500W RF power supply, O.D 60mm optional split tube furnace, 4 channels precision mass flow meter with gas mixing tank, and high-quality vacuum pump. The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid-state, PECVD is an important technology in the field of graphene and can be used to prepare high-quality graphene films and nanostructures.

PECVD with Load Lock System is used for execution of plasma enhanced chemical vapor deposition procedure in semiconductor arena. Utilization of this system can also be noticed in microelectronics arena. Vacuum loadlock of this system has significant role in the production of low stress films.

Characteristics:
Equipped with a pre-heating furnace at the front end, auxiliary solid state source evaporation, and a single temperature zone heating furnace at the back end, temperature control is accurate, easy to operate, and suitable for vapor deposition, two-dimensional materials, and plasma treatment growth processes.

Lower temperature processing compared to conventional CVD: PECVD can deposit materials at lower temperatures than traditional CVD, which can be beneficial for substrates that are sensitive to high temperatures.
Film stress can be controlled by high/low frequency mixing techniques: The stress within the deposited film can be controlled by adjusting the frequency of the plasma, allowing for more precise control over the film's properties.
Control over stoichiometry via process conditions: The chemical composition (stoichiometry) of the deposited film can be precisely controlled by adjusting the process parameters, such as gas flow rates and plasma power.
Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition: PECVD is a versatile technique that can be used to deposit a variety of materials, including silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), and amorphous silicon (a-Si:H). These materials are commonly used in semiconductor and thin-film technology.

Technical Parameter:

Model			PT-T1200-PECVD
Part I: Standard Parts----Pre-heating furnace
Pre-heating furnace (LCD)		Max Temp	1200C
		Working Temp.	≤1100C
		Hot zone	OD60mm*200mm heating zone
Part II : Standard Parts---RF Power
Plasma RF Power Supply	Output Power		5 -500W adjustable with ± 1% stability
	RF frequency		13.56 MHz ±0.005% stability
	Reflection Power		200W max.
	Matching		Automatic
	RF Output Port		50 Ω, N-type, female
	Noise		<50 dB.
	Cooling		Air cooling.
	Tube Size		50 - 80 mm (2''-3.14'' OD)
Part III : Standard Parts----Tube Furnace
Tube Furnace	Chamber		Split type and upper part can be opened
	Max. Temp.		1200℃ for short time
	Continuous Woking Temp.		≤1100℃
	Heating Rate		Suggestion: 0~10℃/min (max. 20℃/min)
	Heating Zone		300mm
	Heating Element		Fe-Cr-Al Alloy doped by Mo
	Thermocouple		N type
	Temperature Control Accuracy		±1℃
	Tube Size		60mm OD X Length 1500 mm
			Material: Quarz Tube
	Temperature Control		PID automatic control via SCR power control
	Heating curves		30 steps programmable
	Vacuum Flange		Stainless Steel vacuum flange with valve
Part IV : Standard Parts---vacuum pump
Vacuum Pump System	Diffusion pump system: TK150+DRV16 Pumping rate:1000L/S (pic. Is only for reference, actual appearan ce depens on final design) Compsite digital vacuum gauge The rotary vane vacuum pump will be designed into a cart with wheel.
Part V: Standard Parts----Gsa system
Mass Flow Meters LCD Touch Screen	Four precision mass flow meters : MFC1：0~100 sccm: H2 (Hydrogen) MFC2：0~200 sccm: O2 (Oxygen) MFC3：0~200 sccm: N2 (Nitrogen) MFC4：0~500 sccm: He (Helium) One gas mixing tank is installed on bottom case with 4 stainless steel needle valves is installed on left side of bottom case to control 4 type gases mixing manually
Water ChilLer	Used for Diffusion pump.

Pre:Plasma enhanced chemical vapor deposition (PECVD) system
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No. 104, building 31, Xingyang equipment manufacturing industrial park, Zhengzhou City,
Henan Province, China
Zhengzhou Protech Technology Co., Ltd
郑州诺泰科技有限公司

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