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0-2000°C RESEARCH MATERIAL & HEATING TREATMENT'S LEADER

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Home > Application > Semiconductor material

model:PT-RTP1000

annealing tube furnace

Application

Detailed Parameters Of The Product

Description：
RTP (Rapid Thermal Processing) is a method of heating the entire silicon wafer to a humidity range of 400 ~ 1100 ℃ in a very short time. Compared with furnace annealing, it has less thermal budget and impurities in silicon wafer Less, less stain and short processing time.

Technical Parameters:

Furnace	Type	RTP Tube furnace
	Display	LED
	Max.temperature	1200℃
	Heating rate	25℃/S
	Temperature accuracy	±50℃
	Tube Diameter(OD)	Ø100mm
	Tube length	600mm
	Heat zone length	220mm
	Heating element	Halogen light
	Tube Material	Quartz
	Chamber materials	alumina fiber
	Thermal couple	K type
	Max.power	30KW
	Working voltage	AC 380V 50HZ three phase
	Temperature control	PID automatic control via SCR power control
	Heating curves	30 steps programmable
Warranty	One year limited manufacturer's warranty (Consumable parts such as processing tubes, O-rings and heating elements are not covered by the warranty, please order replacements at related products below).

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No. 104, building 31, Xingyang equipment manufacturing industrial park, Zhengzhou City, Henan Province, China
Zhengzhou Protech Technology Co., Ltd
郑州诺泰科技有限公司

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